advanced schottky barrier diodes asd501v -n surface mount small signal type features ex termely low vf ex termely thin package low stored charge m ajority carrier conduc tion mechanical dat a case : molded plastic, jedec s od-323 terminals : solder plated, solderable per mi l-std- 750, m ethod 2026 polarity : indicat ed by c athode band m ounting position : a ny weight : 0.000159 ounce, 0.0045 gram maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit repetitive peak reverse voltage v rm 45 v continuous reverse voltage v r 40 v mean rectifying current i o 100 ma forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 1000 ma capacitance between terminals f=1mhz and applied 10vdc reverse voltage c t 20 pf storage temperature t j -40 +125 o c operating temperature t stg -40 +125 o c electrical characteristics (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward voltage if = 100 ma dc v f 0.55 v reverse current v r = 10 v dc i r 30 ua f o r m o s a m s sod-323 0.106 (2.7) 0.090 (2.3) 0.012(0.3) typ. 0.053 (1.35) 0.045 (1.15) 0.035 (0.9) 0.028 (0.7) r0.5 (0.02) typ.
0 1000 f o r w a r d c u r r e n t : ( m a ) 1 10 100 forward vol tage : (v) 0.1 0.2 0.3 0.4 0.5 0.6 fig. 1 forward characteristics 1 2 5 c 2 5 c 7 5 c 2 5 c 0 r e v e r s e c u r r e n t : ( a ) reverse volt age : (v) 40 10 20 0.1 10m 1m 100 10 1 fig. 2 reverse characteristics 125 c 75 c 25 c 0 10 1 5 1 01 52 02 53 03 5 c a p a c i t a n c e b e t w e e n t e r m i n a l s : ( p f ) reverse volt age : v fig. 3 capacitance between terminals characteristics 0 0 20 40 60 80 100 25 50 75 100 i o c u r r e n t ( % ) ambient temperatur e : ta fig. 4 derating c urve (mounting o n glass epoxy pcb s) o o o o o o o rating and characteristic curves (ASD501V-N)
|
